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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 3.5 145 MAX. 1000 1000 450 5 10 32 1.5 160 UNIT V V V A A W V A ns Ths 25 C ICsat=2.5A,IB1=0.5A,IB2=0.8A PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 123 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 1000 5 10 2 4 32 150 150 UNIT V V V A A A A W C C Ths 25 C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W September 1998 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat hFEsat PARAMETER Collector cut-off current 1 CONDITIONS MIN. 450 10 14 10 8 TYP. 0.25 22 25 13.5 10 MAX. 1.0 2.0 10 1.5 1.3 35 35 17 12 UNIT mA mA mA V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter cut-off current VEB = 9 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 3.0 A; IB = 0.6 A Base-emitter saturation voltage IC = 2.5 A; IB = 0.33 A DC current gain IC = 5 mA; VCE = 5 V IC = 500 mA; VCE = 5 V IC = 2.5 A; VCE = 5 V IC = 3.5 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICsat = 2.5 A; IB1 = -IB2 = 0.5 A; RL = 75 ohms; VBB2 = 4 V; TYP. MAX. UNIT s s s s ns s ns 0.5 3.3 0.33 0.7 4 0.45 ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 H; -VBB = 5 V ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 H; -VBB = 5 V; Tj = 100 C 1.4 145 1.6 160 1.7 160 1.9 200 1 Measured with half sine-wave voltage (curve tracer). September 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX + 50v 100-200R IC 90 % ICsat 90 % 10 % Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R IB ts ton toff IB1 10 % tr 30ns -IB2 tf Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC 250 200 LC IB1 100 LB T.U.T. -VBB 0 VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH VCC ICsat 90 % IC RL VIM 0 tp IB RB T.U.T. ts toff IB1 tf 10 % t T -IB2 t Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig.6. Switching times waveforms with inductive load. September 1998 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX ICon 90 % IC 2.0 VCEsat/V 1.6 IC=1A 1.2 2A 3A 4A 10 % ts toff IB IBon t -IBoff 0.0 0.01 0.10 IB/A 1.00 10.00 tf t 0.8 0.4 Fig.7. Switching times waveforms with inductive load. Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25C. 120 110 100 90 80 70 60 50 40 30 20 10 0 % Normalised Derating with heatsink compound 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VBEsat/V P tot 0 20 40 60 80 Ths / C 100 120 140 0.1 1.0 IC/A 10.0 Fig.8. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths) h FE 100 5V Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4. VCEsat/V 0.5 0.4 10 0.3 0.2 Tj = 25 C 1V 0.1 1 0.01 0.0 0.1 IC / A 1 10 0 1 IC/A 10 Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4. September 1998 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX 10 Zth / (K/W) BU1706AX VCC 0.5 1 0.2 0.1 0.05 0.02 P D 0.01 D=0 0.001 T 10u 100u 1m 10m 100m t/s 1 t tp tp LC 0.1 D= T IBon VCL LB T.U.T. -VBB 100 1u 10 Fig.13. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.15. Test circuit RBSOA. Vcl 1000V; Vcc = 150V; VBB = -5V; LB = 1H; Lc = 200H IC/V 11 10 9 8 7 6 5 4 3 2 1 0 0 200 400 600 800 1,000 1,200 VCE CLAMP/V Fig.14. Reverse bias safe operating area. Tj Tj max September 1998 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX 100 IC / A ICM max 10 IC max = 0.01 tp = 10 us II (1) 100 us 1 1 ms 10 ms I 0.1 (2) 500 ms DC III 0.01 1 10 100 VCE / V 1000 Fig.16. Forward bias safe operating area. Ths 25 C (1) (2) I II III NB: Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE 100 and tp 0.6 s. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope. September 1998 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 3.2 3.0 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7 5.08 Fig.17. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 7 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 8 Rev 1.000 |
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